 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Preliminary Data Sheet No. PD60171-C IR062HD4C10U-P2 IR082HD4C10U-P2 HIGH VOLTAGE HALF BRIDGE Features * Output Power IGBT's in half-bridge configuration * 600V rated breakdown voltage * High side gate drive designed for bootstrap operation Product Summary VIN (max) PD (TA = 25C) VCE(ON) typ 600V 3.0W 3.0V * Matched propagation delay for both channels * Independent high and low side output channels (IR062HD4C10U-P2) or cross-conduction prevention logic (IR082HD4C10U-P2) * Undervoltage lockout * 5V Schmitt-triggered input logic * Metal heatsink back for improved PD Package Description The IR062HD4C10U-P2 / IR082HD4C10U-P2 are high voltage, high speed half bridges. Proprietary HVIC and latch immune CMOS technologies, along with the power IGBT technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front-end features an independent high and low side driver in phase with the logic compatible input signals. The output features two IGBT's in a halfbridge configuration. Propagation delays for the high and low side power IGBT's are matched to simplify use. The device can operate up to 600 volts. 7 Pin IR062HD4C10U-P2 IR082HD4C10U-P2 Typical Connections HV DC Bus VIN IR062HD4C10U-P2 Vcc H IN L IN 1 Vcc VB 6 2 H IN VI N VO 9 3 L IN 7 COM TO LOAD 4 COM Please note this info sheet contains advance information which may change before the product is released to production. HV DC Bus VIN IR082HD4C10U-P2 Vcc H IN L IN 1 Vcc VB 6 2 H IN VI N VO 9 3 L IN 7 COM TO LOAD 4 COM Please note this info sheet contains advance information which may change before the product is released to production. 2 IR062HD4C10U-P2 IR082HD4C10U-P2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VIH/VIL VCC dV/dt PD RthJA RthJc TJ TS TL High voltage supply Definition High side floating supply absolute voltage Half-bridge output voltage Logic input voltage (HIN & LIN) Low side and logic fixed supply voltage Peak diode recovery dv/dt Package power dissipation @ TA +25C Thermal resistance, junction to ambient Thermal resistance, junction to case (metal) Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) Min. - 0.3 VO -0.3 -0.3 - 0.3 -0.3 -- -- -- -- -55 -55 -- Max. 600 VO+ 25 VIN+ 0.3 Vcc + 0.3 25 3.50 3.00 50 20 150 150 300 Units V V V V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol VB VIN VO VCC VIH/VIL TA IC High voltage supply Definition High side floating supply absolute voltage Half-bridge output voltage Low side and logic fixed supply voltage Logic input voltage (HIN & LIN) Ambient temperature Continuous collector current (TC = 25 C) (TC = 85 C) Min. VO + 10 -- (note 1) 10 0 -40 -- ---- Max. VO + 20 600 VIN 20 VCC 125 2.0 1.1 Units V A Note 1: Logic operational for VO of -5 to 600V. Logic state held for VO of -5 to -VBO 3 IR062HD4C10U-P2 IR082HD4C10U-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Refer to IC data sheets (IR2106 and IR2108) for further characteristics. TA = 25 oC Symbol ton toff trr Qrr Definition Turn-on propagation delay (see note 2) Turn-off propagation delay (see note 2) Reverse recovery time (FRED Diode) Reverse recovery charge (FRED Diode) -IR062 -IR082 -IR062 -IR082 Min. Typ. Max. Units Test Conditions -- -- -- -- -- -- 220 680 257 220 28 40 310 900 380 400 -- -- nC IF = 400mA di/dt = 100 A/us Vo = 0V ns Vo = 600V Note 2: Switching times as specified and illustrated in figure 2 are referenced to the VO output voltage. This is shown as VO in figure 2. Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN and IIN parameters are referenced to COM. TA = 25 oC Symbol VCCUV+ VBSUV + VCCUVVBSUVIQCC IQBO ILK IINLK IOLK VIH VIL IIN+ IINVCE(on) VEC VF threshold Definition VCC supply undervoltage positive going VCC supply undervoltage negative going threshold Quiescent VCC supply current Quiescent VBO supply current Offset supply leakage current Vin to VO leakage current Min. Typ. Max. Units Test Conditions 8.0 7.4 0.4 20 @25C @25C @150C @25C @150C -- -- -- -- -- 2.7 -- -- -- -- -- -- 8.9 8.2 1.0 60 -- -- 1000 -- 1000 -- -- 20 -- 3.0 1.2 1.5 9.8 9.0 1.6 150 100 250 -- 250 -- -- 0.8 40 1 -- -- -- V A VB = 600V VIN = 600V, VO = 0V VO = 600V VCC = 10V to 20V VIN = 5V IC = 400mA IE = 400mA IF = 400mA V V V mA VO leakage current Logic "1" input voltage Logic "0" input voltage Logic "1" input bias current Logic "0" input bias current Collector-to-Emitter saturation voltage Diode forward voltage Bootstrap Diode forward voltage (D1) V A 4 IR062HD4C10U-P2 IR082HD4C10U-P2 Functional Block Diagram IR062H4C10U-P2 V D1 B IR082H4C10U-P2 VIN VB D1 6 VIN 9 9 6 1 Vcc H O IGBT1 FRED06 1 Vcc H O IGBT1 FRED06 2 H IN IR2106 V S 7 VO 2 H IN IR2108 V S 7 VO L 3 L IN IGBT1 O L FRED06 3 L IN IGBT1 O FRED06 4 COM 4 COM Lead Definitions Lead Symbol Definition VCC HIN LIN VB VIN VO COM Logic and internal gate drive supply voltage. Logic input for high side half bridge output, in phase Logic input for low side half bridge output, in phase (IR062xxx) or out of phase (IR082xxx) High side gate drive floating supply High voltage supply Half bridge output Logic return and half bridge return Lead Assignments 1 2 3 4 6 7 9 Vcc HIN LIN COM VB VO VIN 9 6 1 2 3 4 7 5 IR062HD4C10U-P2 IR082HD4C10U-P2 Case Outline - 7 pin 4X 5.08 (.100) 2X 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) 6 IR062HD4C10U-P2 IR082HD4C10U-P2 LIN LIN 50% LIN LIN 50% HIN 50% HIN VIN VO 0 VO 50% 50% t on t off Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 5/2/2000 7 |
Price & Availability of IR062HD4C10U-P2
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |